Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Ion implantation technology for the selective area doping of SiC microelectronic devices | Bologna UNIT
Boron Doping in Next-Generation Materials for Semiconductor Device | IntechOpen
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
Boron Doping in Next-Generation Materials for Semiconductor Device | IntechOpen
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT Digital Library
PDF) Ion implantation and annealing studies in III-V nitrides | Robert Karlicek, Jr. - Academia.edu
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Low-energy Se ion implantation in MoS2 monolayers | npj 2D Materials and Applications
The Mechanistic Determination of Doping Contrast from Fermi Level Pinned Surfaces in the Scanning Electron Microscope Using Energy-Filtered Imaging and Calculated Potential Distributions | Microscopy and Microanalysis | Cambridge Core
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing: Journal of Applied Physics: Vol 132, No 13
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
